cystech electronics corp. spec. no. : c240m3 issued date : 2013.02.19 revised date : page no. : 1/8 BTB772AJ3 cystek product specification low vcesat pnp epitaxial planar transistor BTB772AJ3 features ? low v ce (sat), v ce (sat)=-0.3 v (max), at i c / i b = -2a / -0.1a ? excellent current gain characteristics ? pb-free lead plating and halogen-free package symbol outline BTB772AJ3 to-252aa b base c collector e emitter b c e absolute maximum ratings (ta=25 c) parameter symbol limits unit collector-base voltage v cbo -50 v collector-emitter voltage v ceo -30 v emitter-base voltage v ebo -7 v collector current (dc) i c -3 a collector current (pulse) i cp -5 (note 1) a pd(t a =25 ) 1 w power dissipation pd(t c =25 ) 15 w operating junction and storage temp erature range tj ; tstg -55~+150 c
cystech electronics corp. spec. no. : c240m3 issued date : 2013.02.19 revised date : page no. : 2/8 BTB772AJ3 cystek product specification thermal data parameter symbol value unit thermal resistance, junction-to-case, max r th,j-c 8.33 c/w thermal resistance, junction-to-ambient, max r th,j-a 125 c/w note : 1. single pulse , pw=10ms characteristics (ta=25 c) symbol min. typ. max. unit test conditions bv cbo -50 - - v i c =-50 a, i e =0 bv ceo -30 - - v i c =-1ma, i b =0 bv ebo -7 - - v i e =-50 a, i c =0 i cbo - - -100 na v cb =-50v, i e =0 i ebo - - -100 na v eb =-7v, i c =0 *v ce(sat) - -0.05 -0.2 v i c =-400ma, i b =-20ma *v ce(sat) - -0.2 -0.3 v i c =-2a, i b =-100ma *r ce(sat) - 0.1 0.15 i c =-2a, i b =-100ma *v be(sat) - -1 -1.2 v i c =-2a, i b =-200ma *h fe 1 160 - - - v ce =-2v, i c =-100ma *h fe 2 180 - 390 - v ce =-2v, i c =-500ma *h fe 3 150 - - - v ce =-2v, i c =-1a f t - 190 - mhz v ce =-10v, i c =-0.5a, f=100mhz cob - 33 - pf v cb =-10v, f =1mhz *pulse test : pulse width 380 s, duty cycle 2% ordering information device package shipping BTB772AJ3-0-t3-g to-252aa (pb-free lead plating an d halogen-free package) 2500 pcs / tape & reel
cystech electronics corp. spec. no. : c240m3 issued date : 2013.02.19 revised date : page no. : 3/8 BTB772AJ3 cystek product specification typical characteristics emitter grounded output characteristics 0 0.05 0.1 0.15 0.2 0.25 0.3 0123456 -vce, collector-to-emitter voltage(v) -ic, collector current(a) 200ua 300ua 400ua 500ua 1ma -ib=100ua emitter grounded output characteristics 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0123456 -vce, collector-to-emitter voltage(v) -ic, collector current(a) 1.5ma 2ma 2.5ma 5ma -ib=500ua emitter grounded output characteristics 0 0.5 1 1.5 2 2.5 3 3.5 4 0123456 -vce, collector-to-emitter voltage(v) -ic, collector current(a) 4ma 6ma 8ma 20ma -ib=2ma emitter grounded output characteristics 0 1 2 3 4 5 6 0123456 -vce, collector-to-emitter voltage(v) -ic, collector current(a) 20ma 10ma 15m a 25ma 50ma -ib=5ma current gain vs collector current 10 100 1000 1 10 100 1000 10000 -ic, collector current(ma) current gain---hfe ta=125c ta= 75c ta= 25c ta=0c ta=-40c vce=-1v current gain vs collector current 10 100 1000 1 10 100 1000 10000 -ic, collector current(ma) current gain---hfe ta=125c ta=75c ta=25c ta=0c ta=-40c vce=-2v
cystech electronics corp. spec. no. : c240m3 issued date : 2013.02.19 revised date : page no. : 4/8 BTB772AJ3 cystek product specification typical characteristics(cont.) current gain vs collector current 10 100 1000 1 10 100 1000 10000 -ic, collector current(ma) current gain---hfe ta=125c ta=75c ta=25c ta=0c ta=-40c vce=-5v saturation voltage vs collector current 10 100 1000 1 10 100 1000 10000 -ic, collector current(ma) saturation voltage---(mv) ta=125c ta=75c ta=25c ta=0c ta=-40c vcesat@ic=50ib saturation voltage vs collector current 100 1000 10000 1 10 100 1000 10000 -ic, collector currentma) saturation voltage---(mv) vbesat@ic=50ib ta=-40c ta=0c ta=25c ta=75c ta=125c on voltage vs collector current 100 1000 10000 1 10 100 1000 10000 -ic, collector current(ma) on voltage---(mv) vbeon@vce=-1v ta=-40c ta=0c ta=25c ta=75c ta=125c capacitance vs reverse-biased voltage 10 100 1000 0.1 1 10 100 -vr, reverse-biased voltage(v) capacitance---(pf) cib cob cutoff frequency vs collector current 10 100 1000 1 10 100 1000 -ic, collector current(ma) cutoff frequency---ft(mhz) vce=-2v
cystech electronics corp. spec. no. : c240m3 issued date : 2013.02.19 revised date : page no. : 5/8 BTB772AJ3 cystek product specification typical characteristics(cont.) power derating curve 0 0.2 0.4 0.6 0.8 1 1.2 0 50 100 150 200 ambient temperature---ta() power dissipation---pd(w) power derating curve 0 2 4 6 8 10 12 14 16 0 50 100 150 200 case temperature---tc() power dissipation---pd(w)
cystech electronics corp. spec. no. : c240m3 issued date : 2013.02.19 revised date : page no. : 6/8 BTB772AJ3 cystek product specification reel dimension carrier tape dimension
cystech electronics corp. spec. no. : c240m3 issued date : 2013.02.19 revised date : page no. : 7/8 BTB772AJ3 cystek product specification recommended wave soldering condition soldering time product peak temperature pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak temperature(tp) 10-30 seconds 20-40 seconds ramp down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of t he package, measured on the package body surface.
cystech electronics corp. spec. no. : c240m3 issued date : 2013.02.19 revised date : page no. : 8/8 BTB772AJ3 cystek product specification to-252aa dimension inches millimeters marking: style: pin 1.base 2.collector 3.emitter 4.collector 3-lead to-252aa plastic surface mount package cystek package code: j3 device name date code b772a 1 2 3 4 inches millimeters dim min. max. min. max. dim min. max. min. max. a 0.087 0.094 2.200 2.400 e 0.086 0.094 2.186 2.386 a1 0.000 0.005 0.000 0.127 e1 0.172 0.188 4.372 4.772 b 0.039 0.048 0.990 1.210 h 0.163 ref 4.140 ref b 0.026 0.034 0.660 0.860 k 0.190 ref 4.830 ref b1 0.026 0.034 0.660 0.860 l 0.386 0.409 9.800 10.400 c 0.018 0.023 0.460 0.580 l1 0.114 ref 2.900 ref c1 0.018 0.023 0.460 0.580 l2 0.055 0.067 1.400 1.700 d 0.256 0.264 6.500 6.700 l3 0.024 0.039 0.600 1.000 d1 0.201 0.215 5.100 5.460 p 0.030 ref 0.750 ref e 0.236 0.244 6.000 6.200 v 0.211 ref 5.350 ref notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing specification or packing method, please c ontact your local cystek sales office. material: ? lead : pure tin plated. ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitable for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance .
|
